所属单位：机电工程学院

发表刊物：Micromachines

关键字：anchor loss; MEMS resonator; phononic crystals; single-phase material; coupling band gap; quality factor

摘要：This paper presents a type of single-phase double “I” hole phononic crystal (DIH-PnC) structure, which is formed by vertically intersecting double “I” holes. By using the finite element method, the complex energy band curve, special point mode shapes, and different delay lines were calculated. Numerical results showed that DIH-PnC yielded ultra-wide band gaps with strong attenuation. The formation mechanism is attributed to the Bragg-coupled local resonance mechanism. The effects of the pore width in DIH-PnC on the band gaps were further explored numerically. Significantly, as the pore width variable, the position of the local resonance natural frequency could be modulated, and this enabled the coupling between the local resonance and the Bragg mechanism. Subsequently, we introduced this DIH-PnC into the thin-film piezoelectric-on-silicon (TPOS) resonator. The results illustrated that the anchor loss quality factor (Qanc) of the DIH-PnC resonator was 20,425.1% higher than that of the conventional resonator and 3762.3% higher than the Qanc of the cross-like holey PnC resonator. In addition, the effect of periodic array numbers on Qanc was researched. When the Qanc reached 1.12 × 106, the number of the period array in DIH-PnC only needed to be 1/6 compared with cross-like holey PnC. Adopting the PnC based on the coupling Bragg and local resonance band gaps had a good effect on improving the Qanc of the resonator.

第一作者：解妙霞,刘海霞,同志学,李丽霞

论文类型：期刊论文

通讯作者：何伟涛

卷号：13/8/1-13

ISSN号：2072-666X

是否译文：否

发表时间：2022-08-29