Investigation of dielectric relaxation mechanism in bismuth doped barium calcium titanate ceramics by dielectric and Raman spectroscopy
Release time:2024-08-09
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- Affiliation of Author(s):
- 材料科学与工程学院
- Journal:
- Materials Chemistry and Physics
- Key Words:
- 中文关键字:陶瓷,烧结,粉体衍射,介电性能,英文关键字:ceramics;sintering;powder diffraction;dielectric p
- Abstract:
- The temperature dependence of dielectric constantwas investigated for (BCT-NBT) and (BCT-BiT5) ceramic samples prepared using the solid-state reaction technique. The dielectric relaxation behavior was observed in BCT-NBT15 and BCT-BiT. The different dielectric relaxation mechanisms have been discussed for these two samples. In view of the defect chemistry, Raman spectroscopy was made on BCT-NBT5, BCT-NBT15, BCT-BiT5 and (BTC-BiT). The development of the new Raman bands at 827 and 825 for BTC-BiT and BCT-BiT, respectively, indicated that Ca2+ ions substitution for B-site Ti4+ ions has happened in BCT-BiT5 ceramics, giving the evidence for the formation of O vacancies. Raman spectroscopy and the temperature dependence of dielectric studies suggest that the dielectric relaxor behavior of Bi doped barium calcium titanate ceramics is related with the Bi3+ ions and the Ca2+ ions.
- Note:
- 云斯宁
- Co-author:
- XiaoliWang,JuanfeiLi,JingShi,DelongXu
- First Author:
- yunsining
- Indexed by:
- Journal paper
- Volume:
- 卷:116
- Issue:
- 期:2-3
- Page Number:
- 页:339-343
- Translation or Not:
- no
- Date of Publication:
- 2009-08-01