所属单位：材料科学与工程学院

发表刊物：Physica Status Solidi (A)

关键字：中文关键字：介电弛豫，线性响应，英文关键字：Linear dielectric response；dielectric relaxation b

摘要：The structure and electrical properties of bismuth-doped BCST (x ≤ 0.40) ceramics prepared using the solid-state reaction were investigated. X-ray diffraction (XRD) analysis shows that 5 at% of Bi doping can be fully incorporated into the perovskite lattice of BCST ceramics. BCST ceramic samples for x < 0.40 have almost the same T m (T m is designated as the temperature of the peak dielectric constant, at T m where the dielectric peak occurs) for different frequencies, while an obvious dielectric relaxation behavior (DRB) is observed in Bi-doped BCST. Bi doping causes T m to shift to a lower temperature and results in an increase in the degree of diffusion and relaxation of the BCST ceramics. A random electric field is suggested to be responsible for the relaxor behavior observations. Double-hysteresis loops are observed at lower temperatures in Bi-doped BCST ceramics. The P–E relationship of Bi-doped BCST ceramics shows the dielectric quasilinearity, which indicates that the random local field acts to strongly inhibit the nanodomains.

备注：云斯宁

合写作者：XiaoliWang,Juanfei,DelongXu.

第一作者：云斯宁

论文类型：期刊论文

卷号：卷：206

期号：期：2

页面范围：页：303-310

是否译文：否

发表时间：2009-01-01